Phototransistor Ambient Light Sensor (A1 & A4 Chip)
New fourth generation A4 chip for phototransistors provide fast response speed, stable performance, and excellent consistency.
DeMint's new fourth generation A4 chip gives characteristics of ambient light sensor (ALS) faster response speed, lower dark current, more consistency in good batch, and smaller static current. When an ambient light sensor is required for portable and many other applications, DeMint A4 chip has the right solution. Ambient Light Sensor A4 chips enhance performance in saving energy, automatic sensitivity to light, automatic sensitivity to light, LED-backlighted, LCD displays code product, instrument ,industry device etc.
The A1 & A4 Chips enabling environmentally friendly photosensitive sensors feature sensitive control under low illumination, stable current signal output under strong light source. Multiple light sources at the same time can be used to ensure consistent photosensitive effect, not false trigger. Meet the latest environmental requirements of toys. Applicable to all kinds of light control lighting products (such as night lights, lawn lamps, solar lights, etc.), automatically adjust the background light (such as LCD, mobile phones, cameras, computer cameras, security monitoring machines, etc.).
For the convenience of installation in all kinds of products in any position, different sizes are available upon request. So that product consistency is better, more market competitiveness. It is also achievable to provide the bright current / dark current (bright resistance / dark resistance) for the most suitable product.
Download complete specification Phototransistor Ambient Light Sensor (A1 & A4 Chip) PDF.
- Good batch consistency, small static current.
- Fast response speed, stable performance, beautiful appearance.
- The effective control distance is greater than 1.5 meters.
- Low current loss in the static.
- Replace the traditional CDS photoresistor.
- Cadmium and lead free with RoHS compliant.
- Applicable to control all kinds of light control toys and Infrared testing equipment.
| Dimensions & Configurations (Unit: mm) (PT-A1-AC-3-PE-850) Plate Edge | ||||||||||
|
||||||||||
| Part NO. | A (mm) | B (mm) | C (mm) | D (mm) | E (mm) | F (mm) | G (mm) | H (mm) | I (mm) | |
| PT-A1-AC-3-PE-850 | 4.05 ± 0.20 | 3.00 ± 0.20 | 1.50 Max. | 1.50 ± 0.5 | 2.54 ± 0.20 | 3.85 ± 0.20 | 0.75 ± 0.20 | 25.4 Min. | 0.50 ± 0.20 | |
- The epoxy resin highest: 1.5mm max.
- Product images, plastic color of apperence, and all other information is for reference only, goods in-kind prevail.
- Short Lead—Collector Long Lead—Emitter.
| Dimensions & Configurations (Unit: mm) (PT-A1-AC-5-HE-850) Helmet Edge | ||||||||||
|
||||||||||
| Part NO. | A (mm) | B (mm) | C (mm) | D (mm) | E (mm) | F (mm) | G (mm) | H (mm) | I (mm) | |
| PT-A1-AC-5-HE-850 | 5.80 ± 0.20 | 4.80 ± 0.20 | 1.50 Max. | 1.50 ± 0.5 | 2.54 ± 0.20 | 5.00 ± 0.20 | 1.50 ± 0.20 | 25.4 Min. | 0.50 ± 0.20 | |
- The epoxy resin highest: 1.5mm max.
- Product images, plastic color of apperence, and all other information is for reference only, goods in-kind prevail.
- Short Lead—Collector Long Lead—Emitter.
| Dimensions & Configurations (Unit: mm) (PT-A4-AC-5-PN-850) Plate None | |||||||||
|
|||||||||
| Part NO. | A (mm) | B (mm) | C (mm) | D (mm) | E (mm) | F (mm) | G (mm) | H (mm) | |
| PT-A4-AC-5-PN-850 | 5.00 ± 0.20 | 5.00 ± 0.20 | 2.50 ± 0.20 | 1.50 ± 0.5 | 2.54 ± 0.20 | 2.50 ± 0.20 | 25.4 Min. | 0.50 ± 0.20 | |
- The epoxy resin highest: 1.5mm max.
- Product images, plastic color of apperence, and all other information is for reference only, goods in-kind prevail.
- Short Lead—Collector Long Lead—Emitter.
| Electro-Optical Characteristics (Ta=25°C) (PT-A1-AC-3-PE-850) | ||||||
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Peak Wavelength | λp | \ | - | 850 | - | nm |
| Spectral Response Bandwidth | λ | \ | 400 | - | 1100 | nm |
| Collector-Emitter Breakdown Voltage | Bvceo | Ice=100µA Ee=0mW/cm2 |
30 | - | - | V |
| Emitter-Base Breakdown Voltage | Bveco | Ice=100µA Ee=0mW/cm2 |
3 | - | - | V |
| Collector-Emitter Saturation Voltage | Vce (sat) |
Ice=2mA Ee=1mW/cm2 |
- | - | 0.4 | V |
| Photo Current | IL(1) | Vcc=5V Ev=10Lux |
3 | 4.5 | 6 | μA |
| IL(2) | Vcc=5V Ev=30Lux |
9 | 13.5 | 18 | μA | |
| IL(3) | Vcc=5V Ev=100Lux |
30 | 45 | 60 | μA | |
| Collector Dark Current | Iceo | Vce=5V Ev=0Lux |
- | - | 0.1 | μA |
| Rise Time | tr | Vcc=5V Ice=1mA RL=1000Ω |
15 | μs | ||
| Fall Time | tf | 15 | ||||
| Electro-Optical Characteristics (Ta=25°C) (PT-A1-AC-5-HE-850) | ||||||
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Peak Wavelength | λp | \ | - | 850 | - | nm |
| Spectral Response Bandwidth | λ | \ | 400 | - | 1100 | nm |
| Collector-Emitter Breakdown Voltage | Bvceo | Ice=100µA Ee=0mW/cm2 |
30 | - | - | V |
| Emitter-Base Breakdown Voltage | Bveco | Ice=100µA Ee=0mW/cm2 |
3 | - | - | V |
| Collector-Emitter Saturation Voltage | Vce (sat) |
Ice=2mA Ee=1mW/cm2 |
- | - | 0.4 | V |
| Photo Current | IL(1) | Vcc=5V Ev=10Lux |
4.5 | 6.5 | 9.0 | μA |
| IL(2) | Vcc=5V Ev=30Lux |
13.5 | 19.5 | 27 | μA | |
| IL(3) | Vcc=5V Ev=100Lux |
45 | 65 | 90 | μA | |
| Collector Dark Current | Iceo | Vce=5V Ev=0Lux |
- | - | 0.1 | μA |
| Rise Time | tr | Vcc=5V Ice=1mA RL=1000Ω |
15 | μs | ||
| Fall Time | tf | 15 | ||||
| Electro-Optical Characteristics (Ta=25°C) (PT-A4-AC-5-PN-850) | ||||||
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Peak Wavelength | λp | \ | - | 850 | - | nm |
| Spectral Response Bandwidth | λ | \ | 400 | - | 1100 | nm |
| Collector-Emitter Breakdown Voltage | Bvceo | Ice=100µA Ee=0mW/cm2 |
30 | - | - | V |
| Emitter-Base Breakdown Voltage | Bveco | Ice=100µA Ee=0mW/cm2 |
3 | - | - | V |
| Collector-Emitter Saturation Voltage | Vce (sat) |
Ice=2mA Ee=1mW/cm2 |
- | - | 0.4∗ | V |
| Photo Current | IL(1) | Vcc=5V Ev=10Lux |
5 | 8 | 12 | μA |
| IL(2) | Vcc=5V Ev=30Lux |
15 | 24 | 36 | μA | |
| IL(3) | Vcc=5V Ev=100Lux |
50 | 80 | 120 | μA | |
| Collector Dark Current | Iceo | Vce=5V Ev=0Lux |
- | - | 0.1 | μA |
| Rise Time | tr | Vcc=5V Ice=1mA RL=1000Ω |
15 | μs | ||
| Fall Time | tf | 15 | ||||
- Vce must be greater than 0.4V to enable the product function and can not exceed its maximum rating 30V. The working volatge: 0.4V ~ 30V.
| Absolute maximum ratings (Ta=25°C) (A1 & A4 Chip) | |||
| Parameter | Symbol | Value | Unit |
| Collector-Emitter Voltage | VCEO | 30 | V |
| Emitter-Collector-Voltage | VECO | 3 | V |
| Power Dissipation | PC | 70 | mW |
| Operating Temperature Range | Topr | -25 ~ +85 | °C |
| Storage Temperature | Tstg | -40 ~ +100 | °C |